Nexperia PSMN4R3-30PL,127 N-channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB

PSMN4R3-30PL-127 Nexperia PSMN4R3-30PL,127 N-channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB
PSMN4R3-30PL,127
Nexperia

Product Information

Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.15V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
41.5 nC @ 10 V
Channel Type:
N
Length:
10.3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
103 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.3 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 100 A 30 V 3-Pin TO-220AB manufactured by Nexperia. The manufacturer part number is PSMN4R3-30PL,127. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.15v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 41.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 103 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4.3 mω maximum drain source resistance.

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PSMN4R3-30PL, N-channel 30V, 4.3mΩ logic level MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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