NXP PSMN1R5-25YL,115 N-channel MOSFET, 100 A, 25 V, 4-Pin LFPAK

PSMN1R5-25YL-115 NXP PSMN1R5-25YL,115 N-channel MOSFET, 100 A, 25 V, 4-Pin LFPAK
Nexperia

Product Information

Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
76 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
109 W
Maximum Drain Source Resistance:
1.5 mΩ
Maximum Gate Threshold Voltage:
2.15V
Height:
1.05mm
Width:
4.1mm
Length:
5mm
Minimum Gate Threshold Voltage:
1.3V
Package Type:
LFPAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NXP N-channel MOSFET 100 A 25 V 4-Pin LFPAK manufactured by Nexperia. The manufacturer part number is PSMN1R5-25YL,115. It has a maximum of 25 v drain source voltage. With a typical gate charge at Vgs includes 76 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 109 w maximum power dissipation. It provides up to 1.5 mω maximum drain source resistance. The product carries 2.15v of maximum gate threshold voltage. In addition, the height is 1.05mm. Furthermore, the product is 4.1mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1.3v. The package is a sort of lfpak. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.

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PSMN1R5-25YL N-channel TrenchMOS logic level FET datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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