This is N-channel MOSFET 840 mA 30 V 3-Pin SOT-416 manufactured by Nexperia. The manufacturer part number is PMR370XN,115. While 840 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 0.9mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of sot-416 (sc-75). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.65 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 530 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.85mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 440 mω maximum drain source resistance.
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This is N-channel MOSFET 840 mA 30 V 3-Pin SOT-416 manufactured by Nexperia. The manufacturer part number is PMR370XN,115. While 840 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 0.9mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of sot-416 (sc-75). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.65 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 530 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.85mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 440 mω maximum drain source resistance.
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