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This is Dual N-channel MOSFET 800 mA 20 V 6-Pin SOT-666 manufactured by Nexperia. The manufacturer part number is PMDT290UNE,115. While 800 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.95v of maximum gate threshold voltage. The package is a sort of sot-666. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.45 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.7mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.09 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 380 mω maximum drain source resistance.
For more information please check the datasheets.
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