Nexperia PH8230E,115 N-channel MOSFET, 67 A, 30 V, 5-Pin LFPAK

PH8230E-115 Nexperia PH8230E,115 N-channel MOSFET, 67 A, 30 V, 5-Pin LFPAK
Nexperia

Product Information

Maximum Continuous Drain Current:
67 A
Transistor Material:
Si
Width:
4.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
LFPAK, SOT-669
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 5 V
Channel Type:
N
Length:
5mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
62.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 mΩ
RoHs Compliant
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This is N-channel MOSFET 67 A 30 V 5-Pin LFPAK manufactured by Nexperia. The manufacturer part number is PH8230E,115. While 67 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of lfpak, sot-669. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 62.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8 mω maximum drain source resistance.

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N-Ch. TRENCHMOS,30V,PH8230E(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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