Nexperia NX3008NBKW,115 N-channel MOSFET, 350 mA, 30 V NX3008NBKW, 3-Pin SOT-323

NX3008NBKW-115 Nexperia NX3008NBKW,115 N-channel MOSFET, 350 mA, 30 V NX3008NBKW, 3-Pin SOT-323
Nexperia

Product Information

Maximum Continuous Drain Current:
350 mA
Width:
1.35mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.52 nC @ 4.5 V
Channel Type:
N
Length:
2.2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
830 mW
Series:
NX3008NBKW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.4 Ω
RoHs Compliant
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This is N-channel MOSFET 350 mA 30 V NX3008NBKW 3-Pin SOT-323 manufactured by Nexperia. The manufacturer part number is NX3008NBKW,115. While 350 ma of maximum continuous drain current. Furthermore, the product is 1.35mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.1v of maximum gate threshold voltage. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.52 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.2mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 830 mw maximum power dissipation. The product nx3008nbkw, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.4 ω maximum drain source resistance.

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NX3008NBKW, 30V, 350mA N-channel Trench MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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