Nexperia NX3008CBKS,115 Dual N/P-channel MOSFET, 200 mA, 350 mA, 30 V NX3008CBKS, 6-Pin SOT-363

NX3008CBKS-115 Nexperia NX3008CBKS,115 Dual N/P-channel MOSFET, 200 mA, 350 mA, 30 V NX3008CBKS, 6-Pin SOT-363
NX3008CBKS,115
Nexperia

Product Information

Maximum Continuous Drain Current:
200 mA, 350 mA
Width:
1.35mm
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.52 nC @ 4.5 V, 0.55 nC @ -4.5 V
Channel Type:
N, P
Length:
2.2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
990 mW
Series:
NX3008CBKS
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.4 Ω, 4.1 Ω
RoHs Compliant
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This is Dual N/P-channel MOSFET 200 mA 350 mA 30 V NX3008CBKS 6-Pin SOT-363 manufactured by Nexperia. The manufacturer part number is NX3008CBKS,115. While 200 ma, 350 ma of maximum continuous drain current. Furthermore, the product is 1.35mm wide. The product complies with automotive standard - aec-q101. It has a maximum of 30 v drain source voltage. The product carries 1.1v of maximum gate threshold voltage. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.52 nc @ 4.5 v, 0.55 nc @ -4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 990 mw maximum power dissipation. The product nx3008cbks, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.4 ω, 4.1 ω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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NX3008CBKS, 30V / 30V, 350mA / 200mA N/P-channel Trench MOSFET(Technical Reference)

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