Maximum Continuous Drain Current:
170 mA, 330 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
50 V, 60 V
Maximum Gate Threshold Voltage:
2.1V
Maximum Drain Source Resistance:
3.6 Ω, 13.5 Ω
Package Type:
SOT-666
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Channel Type:
N, P
Length:
1.7mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.6mm
Minimum Operating Temperature:
-55 °C
