Nexperia BUK761R7-40E,118 N-channel MOSFET, 120 A, 40 V, 3 + Tab-Pin D2PAK

BUK761R7-40E-118 Nexperia BUK761R7-40E,118 N-channel MOSFET, 120 A, 40 V, 3 + Tab-Pin D2PAK
Nexperia

Product Information

Maximum Continuous Drain Current:
120 A
Width:
9.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
118 nC @ 10 V
Channel Type:
N
Length:
10.3mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
324 W
Maximum Gate Source Voltage:
20 V
Height:
4.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3 mΩ
RoHs Compliant
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This is N-channel MOSFET 120 A 40 V 3 + Tab-Pin D2PAK manufactured by Nexperia. The manufacturer part number is BUK761R7-40E,118. While 120 a of maximum continuous drain current. Furthermore, the product is 9.4mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 118 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.3mm. It contains 3 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 324 w maximum power dissipation. It features a maximum gate source voltage of 20 v. In addition, the height is 4.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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