Toshiba TPN6R003NL,LQ(S N-channel MOSFET, 56 A, 30 V U-MOSVIII-H, 8-Pin TSON

TPN6R003NL-LQ-S Toshiba TPN6R003NL,LQ(S N-channel MOSFET, 56 A, 30 V U-MOSVIII-H, 8-Pin TSON
Toshiba

Product Information

Maximum Continuous Drain Current:
56 A
Transistor Material:
Si
Width:
3.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
TSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
3.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
32 W
Series:
U-MOSVIII-H
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
8 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 56 A 30 V U-MOSVIII-H 8-Pin TSON manufactured by Toshiba. The manufacturer part number is TPN6R003NL,LQ(S. While 56 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.1mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of tson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 32 w maximum power dissipation. The product u-mosviii-h, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Its forward diode voltage is 1.2v . It provides up to 8 mω maximum drain source resistance.

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TPN6R003NL, MOSFET N-Channel 30V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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