Toshiba TPHR6503PL N-channel MOSFET, 393 A, 30 V, 8-Pin SOP

TPHR6503PL Toshiba  N-channel MOSFET, 393 A, 30 V, 8-Pin SOP
Toshiba

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
170 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.1V
Channel Type:
N
Width:
5mm
Length:
5mm
Maximum Drain Source Resistance:
890 μΩ
Package Type:
SOP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
393 A
Minimum Gate Threshold Voltage:
1.1V
Forward Diode Voltage:
1.2V
Height:
0.95mm
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-channel MOSFET 393 A 30 V 8-Pin SOP manufactured by Toshiba. The manufacturer part number is TPHR6503PL. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 110 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 170 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.1v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 5mm wide. Its accurate length is 5mm. It provides up to 890 μω maximum drain source resistance. The package is a sort of sop. It consists of 1 elements per chip. While 393 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.1v. Its forward diode voltage is 1.2v . In addition, the height is 0.95mm. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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