Toshiba TPCA8107-H(TE12L,Q,M) P-channel MOSFET, 7.5 A, 40 V U-MOSIII, 8-Pin SOP Advanced

TPCA8107-H-TE12L-Q-M- Toshiba TPCA8107-H(TE12L,Q,M) P-channel MOSFET, 7.5 A, 40 V U-MOSIII, 8-Pin SOP Advanced
Toshiba

Product Information

Maximum Continuous Drain Current:
7.5 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOP Advanced
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 5 V, 27 nC @ 10 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.8 W
Series:
U-MOSIII
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
30 mΩ
RoHs Compliant
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This is P-channel MOSFET 7.5 A 40 V U-MOSIII 8-Pin SOP Advanced manufactured by Toshiba. The manufacturer part number is TPCA8107-H(TE12L,Q,M). While 7.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sop advanced. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 5 v, 27 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.8 w maximum power dissipation. The product u-mosiii, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.95mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 30 mω maximum drain source resistance.

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TPCA8107-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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