Category:
Power MOSFET
Dimensions:
10 x 4.5 x 15mm
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 @ 10 V nC
Channel Type:
N
Typical Input Capacitance @ Vds:
800 pF @ 25 V
Length:
10mm
Pin Count:
3
Forward Transconductance:
4S
Typical Turn-Off Delay Time:
60 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
+30 V
Height:
15mm
Typical Turn-On Delay Time:
40 ns
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
850 mΩ
