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Toshiba TK6Q60W,S1VQ(S N-channel MOSFET, 6.2 A, 600 V DTMOSIV, 3-Pin IPAK

TK6Q60W-S1VQ-S Toshiba TK6Q60W,S1VQ(S N-channel MOSFET, 6.2 A, 600 V DTMOSIV, 3-Pin IPAK
Toshiba

Product Information

Category:
Switching Regulator
Dimensions:
6.65 x 2.3 x 7.12mm
Maximum Continuous Drain Current:
6.2 A
Transistor Material:
Si
Width:
2.3mm
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.7V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
390 pF @ 300 V
Length:
6.65mm
Pin Count:
3
Typical Turn-Off Delay Time:
55 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
7.12mm
Typical Turn-On Delay Time:
40 ns
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
820 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 6.2 A 600 V DTMOSIV 3-Pin IPAK manufactured by Toshiba. The manufacturer part number is TK6Q60W,S1VQ(S. It is of switching regulator category . The given dimensions of the product include 6.65 x 2.3 x 7.12mm. While 6.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.3mm wide. It has a maximum of 600 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.7v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 390 pf @ 300 v . Its accurate length is 6.65mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 55 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 60 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 7.12mm. In addition, it has a typical 40 ns turn-on delay time . Its forward diode voltage is 1.7v . It provides up to 820 mω maximum drain source resistance.

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TK6Q60W,S1VQ(S(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK6Q60W,S1VQ(S N-channel MOSFET, 6.2 A, 600 V DTMOSIV, 3-Pin IPAK. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK6Q60W,S1VQ(S N-channel MOSFET, 6.2 A, 600 V DTMOSIV, 3-Pin IPAK.
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Yes. We ship TK6Q60W,S1VQ(S Internationally to many countries around the world.