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This is N-channel MOSFET 136 A 100 V 3-Pin D2PAK manufactured by Toshiba. The manufacturer part number is TK65G10N1. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 81 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 156 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 10.27mm wide. Its accurate length is 10.35mm. It provides up to 4.5 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 136 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.2v . In addition, the height is 4.46mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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