Toshiba TK5A50D,S5Q(J N-channel MOSFET, 5 A, 500 V, 3-Pin TO-220SIS

TK5A50D-S5Q-J Toshiba TK5A50D,S5Q(J N-channel MOSFET, 5 A, 500 V, 3-Pin TO-220SIS
Toshiba

Product Information

Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
4.4V
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
35 W @ 25 °C
Maximum Gate Source Voltage:
+30 V
Height:
15mm
Forward Diode Voltage:
-1.7V
Maximum Drain Source Resistance:
1.5 Ω
RoHs Compliant
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This is N-channel MOSFET 5 A 500 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK5A50D,S5Q(J. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 4.4v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 35 w @ 25 °c maximum power dissipation. It features a maximum gate source voltage of +30 v. In addition, the height is 15mm. Its forward diode voltage is -1.7v . It provides up to 1.5 ω maximum drain source resistance.

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TK5A50D N-channel MOSFET Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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