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This is N-channel MOSFET 112 A 120 V U-MOSVIII-H 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK56E12N1,S1X(S. While 112 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.45mm wide. It has a maximum of 120 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 69 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.16mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 168 w maximum power dissipation. The product u-mosviii-h, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.1mm. Its forward diode voltage is 1.2v . It provides up to 7 mω maximum drain source resistance.
For more information please check the datasheets.
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