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This is N-channel MOSFET 35 A 650 V DTMOSIV 3-Pin TO-247 manufactured by Toshiba. The manufacturer part number is TK35N65W5,S1F(S. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.02mm wide. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 115 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.94mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 270 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.95mm. Its forward diode voltage is 1.7v . It provides up to 95 mω maximum drain source resistance.
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