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This is N-channel MOSFET 30.8 A 600 V 5-Pin DFN manufactured by Toshiba. The manufacturer part number is TK31V60W5. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 105 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 240 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 4.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 8mm wide. Its accurate length is 8mm. It provides up to 109 mω maximum drain source resistance. The package is a sort of dfn. It consists of 1 elements per chip. While 30.8 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.7v . In addition, the height is 0.85mm. It has a maximum operating temperature of +150 °c. It contains 5 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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