Toshiba TK20A25D,S5X(J N-channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS

TK20A25D-S5X-J Toshiba TK20A25D,S5X(J N-channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS
Toshiba

Product Information

Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
55 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
45 W
Maximum Gate Source Voltage:
+20 V
Height:
15mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
100 mΩ
RoHs Compliant
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This is N-channel MOSFET 20 A 250 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TK20A25D,S5X(J. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 55 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 45 w maximum power dissipation. It features a maximum gate source voltage of +20 v. In addition, the height is 15mm. Its forward diode voltage is 1.7v . It provides up to 100 mω maximum drain source resistance.

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TK20A25D N-channel MOSFET Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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