Toshiba TK14E65W5,S1X(S N-channel MOSFET, 13.7 A, 650 V DTMOSIV, 3-Pin TO-220

TK14E65W5-S1X-S Toshiba TK14E65W5,S1X(S N-channel MOSFET, 13.7 A, 650 V DTMOSIV, 3-Pin TO-220
TK14E65W5,S1X(S
Toshiba

Product Information

Maximum Continuous Drain Current:
13.7 A
Transistor Material:
Si
Width:
4.45mm
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
40 nC @ 10 V
Channel Type:
N
Length:
10.16mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
130 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.1mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
300 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 13.7 A 650 V DTMOSIV 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK14E65W5,S1X(S. While 13.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.45mm wide. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.16mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 130 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.1mm. Its forward diode voltage is 1.7v . It provides up to 300 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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TK14E65W5,S1X(S(Technical Reference)

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