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This is N-channel MOSFET 11.1 A 650 V DTMOSIV 3-Pin IPAK manufactured by Toshiba. The manufacturer part number is TK11Q65W,S1Q(S. While 11.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.3mm wide. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 25 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.65mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 100 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 7.12mm. Its forward diode voltage is 1.7v . It provides up to 440 mω maximum drain source resistance.
For more information please check the datasheets.
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