Toshiba SSM6N7002KFU Dual N-channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363

SSM6N7002KFU Toshiba  Dual N-channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363
Toshiba

Product Information

Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.39 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.1V
Height:
0.9mm
Width:
1.25mm
Length:
2mm
Maximum Drain Source Resistance:
1.75 Ω
Package Type:
SOT-363
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
300 mA
Minimum Gate Threshold Voltage:
1.1V
Forward Diode Voltage:
1.1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
RoHs Compliant
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This is Dual N-channel MOSFET 300 mA 60 V 6-Pin SOT-363 manufactured by Toshiba. The manufacturer part number is SSM6N7002KFU. The product complies with automotive standard - aec-q101. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 0.39 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.1v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. It provides up to 1.75 ω maximum drain source resistance. The package is a sort of sot-363. It consists of 2 elements per chip. While 300 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.1v. Its forward diode voltage is 1.1v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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