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This is Dual N-channel MOSFET 180 mA 20 V 6-Pin SOT-563 manufactured by Toshiba. The manufacturer part number is SSM6N35FE. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of ±10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.55mm. Furthermore, the product is 1.6mm wide. Its accurate length is 1.2mm. It provides up to 20 ω maximum drain source resistance. The package is a sort of sot-563. It consists of 2 elements per chip. While 180 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.4v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins.
For more information please check the datasheets.
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