Toshiba SSM6L36FE Dual N/P-channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563

SSM6L36FE Toshiba  Dual N/P-channel MOSFET, 500 mA, 20 V, 6-Pin SOT-563
Toshiba

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.23 nC @ 4 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Maximum Gate Source Voltage:
±10 V
Maximum Gate Threshold Voltage:
1V
Height:
0.55mm
Width:
1.6mm
Length:
1.2mm
Maximum Drain Source Resistance:
1.52 Ω
Package Type:
SOT-563
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
500 mA
Minimum Gate Threshold Voltage:
0.35V
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
RoHs Compliant
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This is Dual N/P-channel MOSFET 500 mA 20 V 6-Pin SOT-563 manufactured by Toshiba. The manufacturer part number is SSM6L36FE. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1.23 nc @ 4 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of ±10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.55mm. Furthermore, the product is 1.6mm wide. Its accurate length is 1.2mm. It provides up to 1.52 ω maximum drain source resistance. The package is a sort of sot-563. It consists of 2 elements per chip. While 500 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.35v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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