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This is N-channel MOSFET 4.2 A 20 V 6-Pin UF6 manufactured by Toshiba. The manufacturer part number is SSM6K403TU. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 16.8 nc @ 4 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of ±10 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 2mm wide. Its accurate length is 1.7mm. It provides up to 66 mω maximum drain source resistance. The package is a sort of uf6. It consists of 1 elements per chip. While 4.2 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.35v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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