Toshiba SSM3K339R N-channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F

Enrgtech Part No: ET16797806
|
Manufacturer Part No:
SSM3K339R
|
Manufacturer: Toshiba

SSM3K339R Toshiba N-channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F

Product Information

Maximum Drain Source Voltage:

40 V

Typical Gate Charge @ Vgs:

1.1 nC @ 4.2 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Maximum Power Dissipation:

2 W

Maximum Gate Source Voltage:

±12 V

Maximum Gate Threshold Voltage:

1.2V

Height:

0.7mm

Width:

1.8mm

Length:

2.9mm

Maximum Drain Source Resistance:

390 mΩ

Package Type:

SOT-23

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This is N-channel MOSFET 2 A 40 V 3-Pin SOT-23F manufactured by Toshiba. The manufacturer part number is SSM3K339R. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 1.1 nc @ 4.2 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 1.8mm wide. Its accurate length is 2.9mm. It provides up to 390 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. While 2 a of maximum continuous drain current. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

Datasheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Toshiba SSM3K339R N-channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F

SSM3K339R

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