Infineon SPW20N60S5FKSA1 N-channel MOSFET, 20 A, 600 V CoolMOS S5, 3-Pin TO-247

SPW20N60S5FKSA1 Infineon  N-channel MOSFET, 20 A, 600 V CoolMOS S5, 3-Pin TO-247
SPW20N60S5FKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
5.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
79 nC @ 10 V
Channel Type:
N
Length:
15.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
208 W
Series:
CoolMOS S5
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
20.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 20 A 600 V CoolMOS S5 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is SPW20N60S5FKSA1. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.3mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 79 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 208 w maximum power dissipation. The product coolmos s5, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 20.95mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 190 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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