Infineon SPB20N60C3ATMA1 N-channel MOSFET, 21 A, 650 V CoolMOS C3, 3-Pin D2PAK

SPB20N60C3ATMA1 Infineon  N-channel MOSFET, 21 A, 650 V CoolMOS C3, 3-Pin D2PAK
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
87 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.57mm
Width:
11.05mm
Length:
10.31mm
Maximum Drain Source Resistance:
190 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 21 A 650 V CoolMOS C3 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is SPB20N60C3ATMA1. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 87 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 208 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.57mm. Furthermore, the product is 11.05mm wide. Its accurate length is 10.31mm. It provides up to 190 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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CoolMOS Power Transistor SPB20N60C3(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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