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Infineon IRL60S216 N-channel MOSFET, 298 A, 60 V StrongIRFET, 3-Pin D2PAK

IRL60S216 Infineon N-channel MOSFET, 298 A, 60 V StrongIRFET, 3-Pin D2PAK
Infineon

Product Information

Maximum Continuous Drain Current:
298 A
Transistor Material:
Si
Width:
10.67mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
170 nC @ 4.5 V
Channel Type:
N
Length:
11.33mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
375 W
Series:
StrongIRFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.2 mΩ
RoHs Compliant
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This is N-channel MOSFET 298 A 60 V StrongIRFET 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRL60S216. While 298 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 10.67mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 170 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 11.33mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 375 w maximum power dissipation. The product strongirfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.2 mω maximum drain source resistance.

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IR MOSFET StrongIRFET IRL60S216 IRL60SL216(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. You can also search IRL60S216 on website for other similar products.
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You can order Infineon brand products with IRL60S216 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRL60S216 N-channel MOSFET, 298 A, 60 V StrongIRFET, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRL60S216 N-channel MOSFET, 298 A, 60 V StrongIRFET, 3-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793702 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793702.
Yes. We ship IRL60S216 Internationally to many countries around the world.
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