Infineon IRFU6215PBF P-channel MOSFET, 13 A, 150 V HEXFET, 3-Pin IPAK
Product Information
Maximum Continuous Drain Current:
13 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
4V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
66 nC @ 10 V
Channel Type:
P
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
110 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
7.49mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
580 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IRFU6215PBF Internationally to many countries around the world.
This is P-channel MOSFET 13 A 150 V HEXFET 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IRFU6215PBF. While 13 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.39mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 66 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 110 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 7.49mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 580 mω maximum drain source resistance.
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