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This is Dual N-channel MOSFET 9.1 A 200 V HEXFET 5-Pin TO-220 manufactured by Infineon. The manufacturer part number is IRFI4020H-117P. While 9.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers series transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 4.9v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 5 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 21 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.02mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 100 mω maximum drain source resistance.
For more information please check the datasheets.
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