Infineon IRFHM9391TRPBF P-channel MOSFET, 11 A, 30 V HEXFET, 8-Pin PQFN

IRFHM9391TRPBF Infineon  P-channel MOSFET, 11 A, 30 V HEXFET, 8-Pin PQFN
Infineon

Product Information

Maximum Continuous Drain Current:
11 A
Width:
3.2mm
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
P
Length:
3.2mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.6 W
Series:
HEXFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
22.5 mΩ
RoHs Compliant
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This is P-channel MOSFET 11 A 30 V HEXFET 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFHM9391TRPBF. While 11 a of maximum continuous drain current. Furthermore, the product is 3.2mm wide. It has a maximum of 30 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of pqfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.2mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2.6 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 0.8mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 22.5 mω maximum drain source resistance.

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IRFHM9391TRPbF, HEXFET Power MOSFET P-Channel -30V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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