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This is N-channel MOSFET 100 A 30 V HEXFET 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFH5302DTRPBF. While 100 a of maximum continuous drain current. Furthermore, the product is 5mm wide. It has a maximum of 30 v drain source voltage. The product carries 2.35v of maximum gate threshold voltage. It provides up to 3.7 mω maximum drain source resistance. The package is a sort of pqfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.35v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 55 nc @ 15 v. The product is available in [Cannel Type] channel. Its accurate length is 6mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 104 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v .
For more information please check the datasheets.
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