Category:
Power MOSFET
Dimensions:
11 x 5 x 16.5mm
Maximum Continuous Drain Current:
98 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
23 mΩ
Package Type:
TO-273AA
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
160 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6080 pF @ 25 V
Length:
11mm
Pin Count:
3
Typical Turn-Off Delay Time:
39 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
650 W
Series:
HEXFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.5mm
Typical Turn-On Delay Time:
23 ns
Minimum Operating Temperature:
-55 °C
