Maximum Continuous Drain Current:
9.1 A, 11 A
Width:
4mm
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.35V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V, 6.7 nC @ 4.5 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
13.7 mΩ, 20.5 mΩ
This is Dual N-channel MOSFET 9.1 A 11 A 30 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF7907TRPBF. While 9.1 a, 11 a of maximum continuous drain current. Furthermore, the product is 4mm wide. It has a maximum of 30 v drain source voltage. The product carries 2.35v of maximum gate threshold voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.35v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 4.5 v, 6.7 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1v . It provides up to 13.7 mω, 20.5 mω maximum drain source resistance.
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