Infineon IRF7759L2TRPBF N-channel MOSFET, 160 A, 75 V DirectFET, HEXFET, 9+Tab-Pin L8
Product Information
Maximum Continuous Drain Current:
160 A
Width:
7.1mm
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Package Type:
L8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
200 nC @ 10 V
Channel Type:
N
Length:
8.5mm
Pin Count:
9 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
125 W
Series:
DirectFET, HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
5.2mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
2.3 mΩ
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This is N-channel MOSFET 160 A 75 V DirectFET HEXFET 9+Tab-Pin L8 manufactured by Infineon. The manufacturer part number is IRF7759L2TRPBF. While 160 a of maximum continuous drain current. Furthermore, the product is 7.1mm wide. It has a maximum of 75 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of l8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 200 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 8.5mm. It contains 9 + tab pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 125 w maximum power dissipation. The product directfet, hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 5.2mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 2.3 mω maximum drain source resistance.
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