Infineon IPW65R420CFDFKSA1 N-channel MOSFET, 8.7 A, 700 V CoolMOS CFD, 3-Pin TO-247

IPW65R420CFDFKSA1 Infineon  N-channel MOSFET, 8.7 A, 700 V CoolMOS CFD, 3-Pin TO-247
IPW65R420CFDFKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
8.7 A
Transistor Material:
Si
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
700 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31.5 nC @ 10 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
83.3 W
Series:
CoolMOS CFD
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
420 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 8.7 A 700 V CoolMOS CFD 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW65R420CFDFKSA1. While 8.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 700 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 31.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 83.3 w maximum power dissipation. The product coolmos cfd, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 420 mω maximum drain source resistance.

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650V CoolMOS™ CFDA Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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