Infineon IPW60R190P6FKSA1 N-channel MOSFET, 20 A, 650 V CoolMOS P6, 3-Pin TO-247

IPW60R190P6FKSA1 Infineon  N-channel MOSFET, 20 A, 650 V CoolMOS P6, 3-Pin TO-247
IPW60R190P6FKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
151 W
Series:
CoolMOS™ P6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
21.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
190 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 20 A 650 V CoolMOS P6 3-Pin TO-247 manufactured by Infineon. The manufacturer part number is IPW60R190P6FKSA1. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.21mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 151 w maximum power dissipation. The product coolmos™ p6, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 21.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.9v . It provides up to 190 mω maximum drain source resistance.

pdf icon
IPx60R190P6 600V CoolMOS P6 Power Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search IPW60R190P6FKSA1 on website for other similar products.
We accept all major payment methods for all products including ET16793439. Please check your shopping cart at the time of order.
You can order Infineon brand products with IPW60R190P6FKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPW60R190P6FKSA1 N-channel MOSFET, 20 A, 650 V CoolMOS P6, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on Infineon IPW60R190P6FKSA1 N-channel MOSFET, 20 A, 650 V CoolMOS P6, 3-Pin TO-247.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793439 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793439.
Yes. We ship IPW60R190P6FKSA1 Internationally to many countries around the world.