Infineon IPP220N25NFDAKSA1 N-channel MOSFET, 61 A, 250 V OptiMOS FD, 3-Pin TO-220

Enrgtech Part No: ET16793366
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Manufacturer Part No:
IPP220N25NFDAKSA1
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Manufacturer: Infineon

IPP220N25NFDAKSA1 Infineon N-channel MOSFET, 61 A, 250 V OptiMOS FD, 3-Pin TO-220

Product Information

Maximum Drain Source Voltage:

250 V

Typical Gate Charge @ Vgs:

65 nC @ 10 V

Mounting Type:

Through Hole

Channel Mode:

Enhancement

Maximum Power Dissipation:

300 W

Series:

OptiMOS FD

Maximum Gate Source Voltage:

-20 V, +20 V

Height:

15.95mm

Width:

4.57mm

Length:

10.36mm

Maximum Drain Source Resistance:

22 mΩ

Package Type:

TO-220

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This is N-channel MOSFET 61 A 250 V OptiMOS FD 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP220N25NFDAKSA1. It has a maximum of 250 v drain source voltage. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos fd, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.95mm. Furthermore, the product is 4.57mm wide. Its accurate length is 10.36mm. It provides up to 22 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 61 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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Infineon IPP220N25NFDAKSA1 N-channel MOSFET, 61 A, 250 V OptiMOS FD, 3-Pin TO-220

IPP220N25NFDAKSA1

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