Infineon IPP111N15N3GXKSA1 N-channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin TO-220

IPP111N15N3GXKSA1 Infineon  N-channel MOSFET, 83 A, 150 V OptiMOS 3, 3-Pin TO-220
IPP111N15N3GXKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
83 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
41 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
214 W
Series:
OptiMOS™ 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
11.3 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 83 A 150 V OptiMOS 3 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP111N15N3GXKSA1. While 83 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 41 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 214 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 11.3 mω maximum drain source resistance.

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IPB108N15N3 G, IPP111N15N3 G, IPI111N15N3 G, OptiMOS3 Power MOSFET Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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