Category:
Power MOSFET
Dimensions:
8.1 x 8.1 x 1.1mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
8.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
900 mΩ
Package Type:
VSON
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
790 pF @ 100 V
Length:
8.1mm
Pin Count:
4
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
1.1mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
0.9V
