Category:
Power MOSFET
Dimensions:
10.2 x 9.45 x 4.5mm
Maximum Continuous Drain Current:
5.1 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Drain Source Resistance:
1.2 Ω
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
710 pF @ 100 V
Length:
10.2mm
Pin Count:
3
Typical Turn-Off Delay Time:
400 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.5mm
Typical Turn-On Delay Time:
70 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
