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Infineon IPI147N12N3GAKSA1 N-channel MOSFET, 56 A, 120 V OptiMOS 3, 3-Pin I2PAK

IPI147N12N3GAKSA1 Infineon N-channel MOSFET, 56 A, 120 V OptiMOS 3, 3-Pin I2PAK
Infineon

Product Information

Maximum Continuous Drain Current:
56 A
Transistor Material:
Si
Width:
4.572mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
120 V
Maximum Gate Threshold Voltage:
4V
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
107 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.45mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
14.7 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 56 A 120 V OptiMOS 3 3-Pin I2PAK manufactured by Infineon. The manufacturer part number is IPI147N12N3GAKSA1. While 56 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.572mm wide. The product offers single transistor configuration. It has a maximum of 120 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of i2pak (to-262). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 37 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 107 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 9.45mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 14.7 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
pdf icon
IPB144N12N3 G, IPI147N12N3 G, IPP147N12N3 G, OptiMOS3 Power-Transistor(Technical Reference)

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FAQs

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You can order Infineon brand products with IPI147N12N3GAKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPI147N12N3GAKSA1 N-channel MOSFET, 56 A, 120 V OptiMOS 3, 3-Pin I2PAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IPI147N12N3GAKSA1 N-channel MOSFET, 56 A, 120 V OptiMOS 3, 3-Pin I2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793273 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793273.
Yes. We ship IPI147N12N3GAKSA1 Internationally to many countries around the world.
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