Infineon IPG20N04S4L11ATMA1 Dual N-channel MOSFET, 20 A, 40 V OptiMOS T2, 8-Pin TDSON
Product Information
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
6.15mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TDSON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Channel Type:
N
Length:
5.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
41 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
15.5 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is Dual N-channel MOSFET 20 A 40 V OptiMOS T2 8-Pin TDSON manufactured by Infineon. The manufacturer part number is IPG20N04S4L11ATMA1. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.15mm wide. The product offers isolated transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of tdson. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 20 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 41 w maximum power dissipation. The product optimos t2, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 15.5 mω maximum drain source resistance.
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