Deliver to
United Kingdom
This is N-channel MOSFET 9.9 A 550 V CoolMOS CE 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD50R380CEATMA1. It has a maximum of 550 v drain source voltage. With a typical gate charge at Vgs includes 24.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 73 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.41mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 380 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.85v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0
