Deliver to
United Kingdom
Due to adverse weather conditions in the UK, some orders might face delayed processing. We apologise for the inconvenience and thank you for your patience.
This is N-channel MOSFET 9.9 A 550 V CoolMOS CE 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD50R380CEATMA1. It has a maximum of 550 v drain source voltage. With a typical gate charge at Vgs includes 24.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 73 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.41mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 380 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 9.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.85v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0
