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Infineon IPD220N06L3GBTMA1 N-channel MOSFET, 30 A, 60 V OptiMOS 3, 3-Pin DPAK

IPD220N06L3GBTMA1 Infineon N-channel MOSFET, 30 A, 60 V OptiMOS 3, 3-Pin DPAK
IPD220N06L3GBTMA1
Infineon

Product Information

Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
7 nC @ 4.5 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
36 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
39.8 mΩ
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This is N-channel MOSFET 30 A 60 V OptiMOS 3 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD220N06L3GBTMA1. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 7 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 36 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 39.8 mω maximum drain source resistance.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
IPD220N06L3 G OptiMOS-3 Power-Transistor(Technical Reference)

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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPD220N06L3GBTMA1 N-channel MOSFET, 30 A, 60 V OptiMOS 3, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD220N06L3GBTMA1 N-channel MOSFET, 30 A, 60 V OptiMOS 3, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793203 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793203.
Yes. We ship IPD220N06L3GBTMA1 Internationally to many countries around the world.
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