Infineon IPD200N15N3GATMA1 N-channel MOSFET, 50 A, 150 V IPD200N15N3 G, 3 + 2 Tab-Pin DPAK

IPD200N15N3GATMA1 Infineon  N-channel MOSFET, 50 A, 150 V IPD200N15N3 G, 3 + 2 Tab-Pin DPAK
Infineon

Product Information

Maximum Continuous Drain Current:
50 A
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 W
Series:
OptiMOS™ 3
Maximum Gate Source Voltage:
20 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
20 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 50 A 150 V IPD200N15N3 G 3 + 2 Tab-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD200N15N3GATMA1. While 50 a of maximum continuous drain current. Furthermore, the product is 9.45mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 150 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 20 mω maximum drain source resistance.

pdf icon
Datasheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search IPD200N15N3GATMA1 on website for other similar products.
We accept all major payment methods for all products including ET16793202. Please check your shopping cart at the time of order.
You can order Infineon brand products with IPD200N15N3GATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPD200N15N3GATMA1 N-channel MOSFET, 50 A, 150 V IPD200N15N3 G, 3 + 2 Tab-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD200N15N3GATMA1 N-channel MOSFET, 50 A, 150 V IPD200N15N3 G, 3 + 2 Tab-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16793202 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16793202.
Yes. We ship IPD200N15N3GATMA1 Internationally to many countries around the world.