Infineon IPD048N06L3GBTMA1 N-channel MOSFET, 90 A, 60 V OptiMOS 3, 3-Pin DPAK

IPD048N06L3GBTMA1 Infineon  N-channel MOSFET, 90 A, 60 V OptiMOS 3, 3-Pin DPAK
IPD048N06L3GBTMA1
Infineon

Product Information

Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
7.36mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
37 nC @ 4.5 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
115 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
8.2 mΩ
RoHs Compliant
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This is N-channel MOSFET 90 A 60 V OptiMOS 3 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD048N06L3GBTMA1. While 90 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 7.36mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 37 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 115 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 8.2 mω maximum drain source resistance.

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IPD048N06L3 G OptiMOS 3 Power-Transistor(Technical Reference)

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