Category:
Power MOSFET
Dimensions:
10.31 x 11.05 x 4.57mm
Maximum Continuous Drain Current:
8.7 A
Transistor Material:
Si
Width:
11.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
700 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
870 pF @ 100 V
Length:
10.31mm
Pin Count:
3
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83.3 W
Series:
CoolMOS CFD
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.57mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
420 mΩ
